IRF610S, sihf610s, irf610l, sihf610l www.vishay.com vishay siliconix s15-1659-rev. d, 20-jul-15 1 document number: 91024 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet features ? surface mount ? available in tape and reel ? dynamic dv/dt rating ? repetitive avalanche rated ? fast switching ? ease of paralleling ? simple drive requirements ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 note ? * this datasheet provides information about parts that are ? rohs-compliant and / or parts th at are non-rohs-compliant. for ? example, parts with lead (pb) te rminations are not rohs-compliant. ? please see the information / tables in this datasheet for details. description third generation power mosfet s from vishay provide the designer with the best combi nation of fast switching, ruggedized device design , low on-resistance and cost-effectiveness. ? the d 2 pak (to-263) is a surface mount power package capable of accommodating di e sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak (to-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 w in a typical surface mount application. note a. see device orientation. notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. v dd = 50 v, starting t j = 25 c, l = 8.8 mh, r g = 25 ? , i as = 3.3 a (see fig. 12). c. i sd ? 3.3 a, di/dt ? 70 a/s, v dd ? v ds , t j ? 150 c. d. 1.6 mm from case. e. when mounted on 1" square pcb (fr-4 or g-10 material). product summary v ds (v) 200 r ds(on) ( ? )v gs = 10 v 1.5 q g (max.) (nc) 8.2 q gs (nc) 1.8 q gd (nc) 4.5 configuration single n-channel mosfet g d s d 2 pak (to-263) g d s i 2 pak (to-262) g d s available available ordering information package d 2 pak (to-263) d 2 pak (to-263) d 2 pak (to-263) i 2 pak (to-262) lead (pb)-free and halogen-free sihf610s-ge3 sihf610strl-ge3 a sihf610strr-ge3 a sihf610l-ge3 a lead (pb)-free IRF610Spbf IRF610Strlpbf a IRF610Strrpbf a irf610lpbf a absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 200 v gate-source voltage v gs 20 continuous drain current v gs at 10 v t c = 25 c i d 3.3 a t c = 100 c 2.1 pulsed drain current a i dm 10 linear derating factor 0.29 w/c linear derating fa ctor (pcb mount) e 0.025 single pulse avalanche energy b e as 64 mj repetitive avalanche current a i ar 3.3 a repetitive avalanche energy a e ar 3.6 mj maximum power dissipation t c = 25 c p d 36 w maximum power dissipation (pcb mount) e t a = 25 c 3.0 peak diode recovery dv/dt c dv/dt 5.0 v/ns operating junction and storage temperature range t j , t stg -55 to +150 c soldering recommendations (peak temperature) d for 10 s 300
IRF610S, sihf610s, irf610l, sihf610l www.vishay.com vishay siliconix s15-1659-rev. d, 20-jul-15 2 document number: 91024 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. repetitive rating; pulse widt h limited by maximum junction temperature (see fig. 11). b. pulse width ? 300 s; duty cycle ? 2 %. c. when mounted on 1" square pcb (fr-4 or g-10 material). thermal resistance ratings parameter symbol min. typ. max. unit maximum junction-to-ambient ? (pcb mount) c r thja --40 c/w maximum junction-to-ambient r thja --62 maximum junction-to-case (drain) r thjc --3.5 specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0, i d = 250 a 200 - - v v ds temperature coefficient ? v ds /t j reference to 25 c, i d = 1 ma -0.30- v/c gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 - 4.0 v gate-source leakage i gss v gs = 20 v - - 100 na zero gate voltage drain current i dss v ds = 200 v, v gs = 0 v - - 25 a v ds = 160v, v gs = 0 v, t j = 125 c - - 250 drain-source on-sta te resistance r ds(on) v gs = 10 v i d = 2.0 a b --1.5 ? forward transconductance g fs v ds = 50 v, i d = 2.0 a b 0.80 - - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz, see fig. 5 - 140 - pf output capacitance c oss -53- reverse transfer capacitance c rss -15- total gate charge q g v gs = 10 v i d = 3.3 a, v ds = 160 v see fig. 6 and 13 b --8.2 nc gate-source charge q gs --1.8 gate-drain charge q gd --4.5 turn-on delay time t d(on) v dd = 100 v, i d = 3.3 a, r g = 24 ? , r d = 30 ?? see fig. 10 b -8.2- ns rise time t r -17- turn-off delay time t d(off) -14- fall time t f -8.9- internal drain inductance l d between lead, ? 6 mm (0.25") from package and center of die contact -4.5- nh internal source inductance l s -7.5- drain-source body diode characteristics continuous source-drain diode current i s mosfet symbol ? showing the ? integral reverse ? p - n junction diode --3.3 a pulsed diode forward current a i sm --10 body diode voltage v sd t j = 25 c, i s = 3.3 a, v gs = 0 v b --2.0v body diode reverse recovery time t rr t j = 25 c, i f = 3.3 a, di/dt = 100 a/s b - 150 310 ns body diode reverse recovery charge q rr - 0.60 1.4 c forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s and l d ) d s g s d g
IRF610S, sihf610s, irf610l, sihf610l www.vishay.com vishay siliconix s15-1659-rev. d, 20-jul-15 3 document number: 91024 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage 91024_01 20 s pulse width t c = 25 c 4.5 v v ds , drain-to-source voltage (v) i d , drain current (a) 10 0 10 1 10 1 10 0 10 -1 10 -1 bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 10 0 10 -1 10 0 10 1 v ds , drain-to-source voltage (v) i d , drain current (a) 4.5 v bottom to p v gs 15 v 10 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v 4.5 v 20 s pulse width t c = 150 c 91024_02 10 -1 20 s pulse width v ds = 50 v 10 0 10 -1 i d , drain current (a) v gs , gate-to-source voltage (v) 5678910 4 91024_03 10 -2 i d = 3.3 a v gs = 10 v 3.5 0.0 1.0 1.5 2.0 2.5 3.0 t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized) 91024_04 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 0.5 91024_05 300 250 200 150 0 100 10 0 10 1 capacitance (pf) v ds , drain-to-source voltage (v) v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c iss c rss c oss 50 91024_06 q g , total gate charge (nc) v gs , gate-to-source voltage (v) 20 16 12 8 0 4 02 8 6 4 i d = 3.3 a for test circuit see figure 13 10 v ds = 40 v v ds = 100 v v ds = 160 v
IRF610S, sihf610s, irf610l, sihf610l www.vishay.com vishay siliconix s15-1659-rev. d, 20-jul-15 4 document number: 91024 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain cu rrent vs. case temperature fig. 10a - switching time test circuit fig. 10b - switching time waveforms fig. 11 - maximum effective transient thermal impedance, junction-to-case 91024_07 10 1 10 0 10 -1 25 c 150 c 0.4 0.8 1.6 1.2 2.0 v gs = 0 v v sd , source-to-drain voltage (v) i sd , reverse drain current (a) 100 s 1 ms 10 ms operation in this area limited by r ds(on) v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 c t j = 150 c single pulse 10 -2 10 2 0.1 2 5 0.1 2 5 1 2 5 10 2 5 25 1 25 10 25 10 2 25 10 3 91024_08 i d , drain current (a) t c , case temperature (c) 0.0 1.0 2.0 3.0 4.0 25 150 125 100 75 50 91024_09 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f 10 1 0.1 10 -2 10 -5 10 -4 10 -3 10 -2 0.1 1 10 p dm t 1 t 2 t 1 , rectangular pulse duration (s) thermal response (z thjc ) notes: 1. duty factor, d = t 1 /t 2 2. peak t j = p dm x z thjc + t c single pulse (thermal response) 0 ? 0.5 0.2 0.1 0.05 0.02 0.01 91024_11
IRF610S, sihf610s, irf610l, sihf610l www.vishay.com vishay siliconix s15-1659-rev. d, 20-jul-15 5 document number: 91024 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 12c - maximum avalanche energy vs. drain current fig. 13a - basic gate charge waveform fig. 13b - gate ch arge test circuit r g i as 0.01 t p d.u.t l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p 140 0 40 60 80 100 120 25 150 125 100 75 50 starting t j , junction temperature (c) e as , single pulse energy (mj) bottom to p i d 1.5 a 2.1 a 3.3 a v dd = 50 v 91024_12c 20 q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
IRF610S, sihf610s, irf610l, sihf610l www.vishay.com vishay siliconix s15-1659-rev. d, 20-jul-15 6 document number: 91024 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 14 - for n-channel ? ? ? ? ? ? ? ? ? vishay siliconix maintains worldw ide manufacturing ca pability. products may be manufactured at one of several qualified locatio ns. reliability da ta for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91024 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
document number: 91364 www.vishay.com revision: 15-sep-08 1 package information vishay siliconix to-263ab (high voltage) notes 1. dimensioning and toler ancing per asme y14.5m-1994. 2. dimensions are shown in millimeters (inches). 3. dimension d and e do not include mold flash. mold flash shal l not exceed 0.127 mm (0.005") per side. these dimensions are me asured at the outmost extremes of the plastic body at datum a. 4. thermal pad contour optional within dimension e, l1, d1 and e1. 5. dimension b1 and c1 apply to base metal only. 6. datum a and b to be determined at datum plane h. 7. outline conforms to jedec outline to to-263ab. 5 4 1 3 l1 l2 d b b e h b a detail a a a c c2 a 2 x e 2 x b 2 2 x b 0.010 a b mm 0.004 b m base metal plating b 1, b 3 ( b , b 2) c1 (c) section b - b and c - c scale: none lead tip 4 34 (dat u m a) 2 c c b b 5 5 v ie w a - a e1 d1 e 4 4 b h seating plane ga u ge plane 0 to 8 detail ?a? rotated 90 cw scale 8 :1 l3 a1 l4 l millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 - 0.270 - a1 0.00 0.25 0.000 0.010 e 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 e1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 l2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.38 9.65 0.330 0.380 l4 4.78 5.28 0.188 0.208 ecn: s-82110-rev. a, 15-sep-08 d w g: 5970
legal disclaimer notice www.vishay.com vishay revision: 13-jun-16 1 document number: 91000 disclaimer ? all product, product specifications and data ar e subject to change with out notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of th e products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product , (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, includ ing warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain types of applicatio ns are based on vishays knowledge of typical requirements that are often placed on vishay products in generic applications. such statements are not binding statements about the suitability of products for a particular applic ation. it is the customers responsibility to validate tha t a particular product with the prope rties described in the product sp ecification is suitable for use in a particular application. parameters provided in datasheets and / or specifications may vary in different ap plications and perfor mance may vary over time. all operating parameters, including ty pical parameters, must be va lidated for each customer application by the customer s technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product could result in personal injury or death. customers using or selling vishay product s not expressly indicated for use in such applications do so at their own risk. please contact authorized vishay personnel to obtain writ ten terms and conditions rega rding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.
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